Semiconductor device

摘要

A semiconductor device includes: a semiconductor layer having a first end portion and a second end portion; a first main electrode provided on the first end portion and electrically connected to the semiconductor layer; a second main electrode provided on the second end portion and electrically connected to the semiconductor layer; a first gate electrode provided via a first gate insulating film in a plurality of first trenches formed from the first end portion toward the second end portion; and a second gate electrode provided via a second gate insulating film in a plurality of second trenches formed from the second end portion toward the first end portion. Spacing between a plurality of the first gate electrodes and spacing between a plurality of the second gate electrodes are 200 nm or less.

主权项

1. A semiconductor device comprising:
a semiconductor layer including:
an N-type base layer;a first P-type base layer on a first side of the N-type base layer;a second P-type base layer on a second side of the N-type base layer, the N-type base layer being between the first and second P-type base layers in a first direction; a plurality of first gate electrodes provided on a first insulating film on the first side of the N-type base layer, the plurality of first gate electrodes spaced from each other in a second direction crossing the first direction, at least a portion of the first P-type base layer and a first part of the N-type base layer being between two of the plurality of first gate electrodes in the second direction; a plurality of second gate electrodes provided on a second insulating film on the second side of the N-type base layer, the plurality of second gate electrodes being spaced from the plurality of first gate electrodes in the first direction, the plurality of second gate electrodes spaced from each other in the second direction, at least a portion of the second P-type base layer and a second part of the N-type base layer being between two of the plurality of second gate electrodes in the second direction; a first electrode on the first side of the N-type base layer and electrically contacting the first P-type base layer; and a second electrode on the second side of the N-type base layer and electrically contacting the second P-type base layer.