Semiconductor device with plated pillars and leads

摘要

A semiconductor device with plated pillars and leads is disclosed and may include a semiconductor die comprising a conductive pillar, a conductive lead electrically coupled to the conductive pillar, a metal plating layer covering the conductive lead and conductive pillar, and an encapsulant material encapsulating the semiconductor die and at least a portion of the plating layer. The pillar, lead, and plating layer may comprise copper, for example. The plating layer may fill a gap between the pillar and the lead. A portion of the metal plating layer may, for example, comprise an external lead. The metal plating layer may cover a side surface of the pillar and a top surface, side surface, and at least a portion of a bottom surface of the lead. The metal plating layer may cover side and bottom surfaces of the pillar and top, side, and at least a portion of bottom surfaces of the conductive lead.

主权项

1. A semiconductor device comprising:
a semiconductor die comprising a conductive pillar; a conductive lead electrically coupled to the conductive pillar; a metal plating layer extending from the semiconductor die and covering the conductive lead and the conductive pillar; and an encapsulant material encapsulating the semiconductor die and at least a portion of the metal plating layer;
wherein the metal plating layer covers a side surface of the conductive pillar and a top surface, a side surface, and at least a portion of a bottom surface of the conductive lead.