Semiconductor structure with UBM layer and method of fabricating the same

摘要

A semiconductor structure with an under bump metallization (UBM) layer is provided. The semiconductor structure at least includes a substrate, a metal pad disposed on the substrate, an insulating layer covering the substrate and an edge of the metal pad, wherein at least one recess is disposed within the insulating layer and a first UBM layer contacts the metal pad. The recess is adjacent to the metal pad and the recess is in the shape of a ring. The first UBM layer contacts part of the recess.

主权项

1. A semiconductor structure with an under bump metallization layer, comprising:
a substrate; a metal pad disposed on the substrate; an insulating layer covering the substrate and an edge of the metal pad; at least one recess disposed within the insulating layer, wherein the recess is adjacent to the metal pad, and the recess is in a shape of a ring; and a first under bump metallization layer contacting the metal pad, wherein the first under bump metallization layer contacts part of the recess.