| 摘要 |
PURPOSE:To obtain a solar battery using a high-reproducibility compound semiconductor by preventing an oxide film from being formed on the surface of a GaAlAs layer in production. CONSTITUTION:N-type GaAs layer 22, p-type GaAlAs layer 23 and pn junction 24 are formed on n-type GaAs crystal substrate 21, and p-type GaAs layer 27 is grown. After that, Zn is diffused to form p<+>-type diffusion layer 25, and ohmic electrodes 25a and 21a are formed. Next, electrode 25a in the p<+>-type diffusion layer side is used as a mask to remove p-type GaAs layer 27, and a reflection prevention film is formed on the surface of p-type GaAlAs layer 24. |
