| 摘要 |
PURPOSE:To enable the use of the capsule in the high pressure higher than the critical pressure resistance by enclosing the quartz capsule storing the semiconductor wafer with the metal high-pressure barrel with installation of the control mechanism which makes the voltage inside the barrel equal to the pressure inside the capsule to the metal barrel. CONSTITUTION:Quartz capsule 2 which stores wafer 15 and water 16 weighed to secure the necessary pressure at the process temperature is provided inside metal high-pressure barrel 1, and such barrel 1 is inserted to heating furnace 13. Then pressure detector 4 is attached to the end part of barrel 1 to measure the inner pressure, and at the same time sensor 5 is installed inside the capsule to detect the temperature inside the capsule. Thus, sensor 5 is connected to pressure controller 8 via tempeature detector 6 and arithmetic unit 7, with detector 4 connected also to controller 8. Then pipe 9 is attached to barrel 1 to be connected to pressure pump 11 via valve 10, and the switch control is given via controller 8 both to valve 10 and exhaustion valve 12 branched off from pipe 9. In this way, a balance is secured between the inner and outer voltage capsule 2. |
