| 摘要 |
PURPOSE:To set the characteristic of bipolar transistor separately from that of electrostatic induction transistor thereby to improve the electric characteristic of the transistor and increase the integration degree thereof. CONSTITUTION:A semiconductor layer 2 which becomes a first region is grown on a semiconductor substrate, 1 and in said layer 2 a plurality of regions 3 which becomes second regions are diffusion-formed. Then, shallow regions 4 which become third regions are provided in the layer 2 exposed between the regions 3, and a region 12 which becomes a fourth region in contact with the region 3 at the end part is diffusion-formed up to the substrate 1, and in said region 12 there is provided a region 5 which forms a fifth region. Thereafter, an electrode 6 is fitted to the region 3 contacting the region 12, electrodes 7 to the regions 4, and an electrode 8 to the region 5. In this manner, a composite structure is formed, and the regions 3, 5 and 12 constitute a PNP type bipolar element, and the substrate,1 and the regions 2 through 4 constitute an electrostatic induction transistor. According to this arrangement, the regions which is the base of the bipolar element can be set separately which is the channel of the electrostatic element, and therefore its characteristic is improved. |
