发明名称 |
HALVLEDARKOMPONENTBRICKA OCH SETT ATT FRAMSTELLA DENSAMMA |
摘要 |
Disclosed is a semiconductor device and a method for the manufacture thereof. A semiconductor wafer with three stacked regions is provided. An inner region exhibits one conductivity type and the two outer regions exhibit the opposite conductivity type. Isolation regions of the opposite conductivity type are formed by the temperature gradient zone melting process to separate the wafer into a plurality of device regions. Peripheral grooves are cut in one major surface in each device region. The grooves extend into the interior region thus electrically isolating the portion of the major surface within the grooves from the other major surface. The grooves are filled with a passivation material. |
申请公布号 |
SE412488(B) |
申请公布日期 |
1980.03.03 |
申请号 |
SE19760013202 |
申请日期 |
1976.11.25 |
申请人 |
* GENERAL ELECTRIC COMPANY |
发明人 |
J K * BOAH;R W * KENNEDY |
分类号 |
H01L21/208;H01L21/225;H01L21/24;H01L21/301;H01L21/316;H01L21/761;H01L21/78;H01L29/06;H01L29/74;(IPC1-7):01L21/22;01L21/76 |
主分类号 |
H01L21/208 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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