发明名称 HIGH-FREQUENCY SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a high-frequency semiconductor device having an excellent operability.SOLUTION: A high-frequency semiconductor device according to an embodiment is used by being arranged on a cooling body and arranged in a thermal insulation container together with the cooling body. The high-frequency semiconductor device comprises: a base substance; and a high-frequency circuit in which an airtight package is configured by a substrate having a through-hole in part thereof, a frame body provided on the substrate, and a lid fixed on the frame body, and that includes a low-noise amplification element provided on the substrate of the package. At least a part of the high-frequency circuit is configured by a superconducting circuit. The superconducting circuit is arranged on the base substance in the through-hole of the substrate.SELECTED DRAWING: Figure 2
申请公布号 JP2016171193(A) 申请公布日期 2016.09.23
申请号 JP20150049658 申请日期 2015.03.12
申请人 TOSHIBA CORP 发明人 TAKAGI KAZUTAKA
分类号 H01L23/02 主分类号 H01L23/02
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