METALLIZING SEMICONDUCTOR DEVICES

摘要

A process for metallizing semiconductor wafers with a silicon/aluminium alloy. The wafers mounted on a carrier are placed in a vacuum chamber and surface activated with titanium tetrachloride vapour. The batch of wafers is then exposed at elevated temperatures simultaneously or sequentially to an aluminium alkyl vapour and to silane. The deposition temperature or temperatures is/are adjusted to provide the desired degree of alloying.