| 摘要 |
PURPOSE:To obtain a light-emitting device without using a pn-junction, by providing on both sides of a differential-negative-movement-rate-indicating semiconductor layer electrode regions which is the same electroconductive type as the semiconductor layer but of higher impurity concentration and impressing onto the electrode region a voltage exceeding threshold vlaue voltage whereby avalanche multiplication is caused. CONSTITUTION:An n-type GaAs active layer 2, which has differential-negative-movement-rate of approximately 2X10<17>/cm<3> of carrier concentration, is allowed to achieve epitaxial growth on a semi-insulation GaAs substrate 1, and n<+>-type electrode regions 2a and 2b having approximately 4X10<18>/cm<3> of carrier concentration are allowed to achieve selective growth on the both sides of the active layer 2. And then, an anode electrode A and a cathode electrode C are attached on these regions 2a and 2b, and a Schottky barrier electrode G is attached in the center of the layer 2. In this mechanism, if the electrode C is grounded and the electrode A is impressed with a voltage exceeding the threshold value voltage, a high electric field domain 4 based on differential- negative-movement-rate occurs an nn<+>-interface 3 allowing an avalanche multiplication 5 to occur in this. Further, by controlling the voltage to be impressed onto the electrode 5, it becomes easily possible to control a cavity layer 6 underneath the electrode. |
