| 摘要 |
PURPOSE:To highten brightness of light and also to emit it to outside efficiently, by diminishing luminous region by selective dispersion of impurities and concentrating current passing in a diode. CONSTITUTION:By piling n-type Ga1-xAlxAs layer 2, p-type Ga1-yAlyAs active layer 3 and p-type Ga1-xAlxAs layer 4 on n-type GaAs substrate 1 and allowing them to achieve epitaxial growth, a circular Al2O3 film 41 is formed on the top- most layer. And, in order to protect the layer 4 from selective dispersion and also to obtain an impurities concentration good suitable for a diode, a thick SiO2 film 5 is made to grow on an entire surface including the film 41 and a p-type Zn dispersion region 11, in which dispersion front reaches the center of the layer 2 passing through the SiO2 film 5, is formed to cause a small-diameter luminous region 10 to inside of the active layer 3. And then, the film 5 is removed from the center section leaving it only to peripheral area and the film 4 is also removed, and an Au-Cr p side electrode 7 is attached in contact with the exposed layer 4 and a light-taking window 9 is opened in the center section. Further, an n side electrode 8 is also attached onto reverse side of the substrate 1. |
