| 摘要 |
PURPOSE:To form source and drain regions having necessary high density impurity in the semiconductor device by doping impurity with a gate electrode laminated with low specific resistance semiconductor layer and metallic layer and polyimide series resin mask layer as masks. CONSTITUTION:Openings 2a, 2b are formed at a thick insulating layer 2 on an N type semiconductor substrate 1, and P type region 3 is formed in the substrate 1. The low specific resistance semicodnctor layer 5 and the metallic layer 20 are laminated through a gate insulating layer 4 on a gate electrode are coated in the openings 2a, 2b. Then, polyimide series resin mask layer 21 is selectively coated on the opening 2a. Thereafter, with the layers 2, 5, 21 as masks a P type impurity is injected to the substrate 1 to form source and drain regions 7s, 7d. Subsequently, the layer 21 is removed, and a layer 21 is formed on the opening 2b. Then, with the layers 2, 5, 21 as masks N type impurity is injected into the region 3 to form source and drain regions 8s, 8d. In this manner, necessary high density can be formed as the source and the drain regions, and exact self-alignment can be carried out thereat. |
