| 摘要 |
PHN 8601 6.9.1977 A semiconductor device having a silicon substrate provided with an insulating layer with a window. A silicon layer is deposited on the insulating layer and in the window. The silicon layer comprises,n-type and n-type conductive parts which adjoin each other within the window and serve as a connection conductor and an electrode of n-type and p-type oonductive active zones, respectively, of the device. |
