| 摘要 |
<p>An efficient electron emitter cold cathode is formed by first placing an H-type monocrystalline substrate of about 100 at about 500 microns in thickness in a furnace. The furnace is heated to about 850.degree.C to about 900.degree.C and an N-type layer of about 10 to 15 microns of SnO2 is deposited onto the top surface of the substrate using a suitable carrier gas. Then, a P-type layer of about 10 microns of SnO2 is deposited on the N-type layer. The furnace is then cooled at a rate of about 10.degree.C per minute to about 600.degree.C to form the emitter. The furnace is then cooled to room temperature and the emitter removed from the furnace. The emitter is subjected to etching and polishing to obtain a P-type layer of about 2 to 4 microns, and a nonreactive metal contact is then deposited on the P-type layer. The emitter is then completed by bonding a metal contact to the base of the N-type monocrystalline substrate.</p> |
