| 摘要 |
To form a complex and fine pattern by combining optical exposure technology and charged particle beam exposure technology, provided is an exposure apparatus that radiates a charged particle beam at a position corresponding to a line pattern on a sample, including a beam generating section (20, 30, 40, 50) that generates a plurality of the charged particle beams at different irradiation positions in a width direction (Y) of the line pattern; a scanning control section (190) that performs scanning with the irradiation positions of the charged particle beams along a longitudinal direction (X) of the line pattern; a selecting section (160) that selects at least one charged particle beam to irradiate the sample from among the plurality of charged particle beams, at a designated irradiation position in the longitudinal direction of the line pattern; and an irradiation control section (170) that controls the at least one selected charged particle beam to irradiate the sample. |
