| 摘要 |
<p>PURPOSE:To remove eaves-shaped portions, which are formed by mesa cover and mesa-etching of electrode layers, efficiently without adverse effects by a method wherein the eaves-shaped portions are broken by a jet water current and removed. CONSTITUTION:A mesa cover 13 with a window hole 13a is formed on a main surface at an emitter electrode 9 side of a semiconductor wafer 11. A mesa groove 14 in an extent that does not reach a P-N junction 4 is made up. The cover 13 is removed, mesa covers 15 with window holes 15a are built up, and mesa grooves 18 communicated with the mesa groove 14 are formed crossing the junction 4. Eaves-shaped portions are made up at the covers 15 and collector electrodes 7 at that time. A jet water current is blown against the eaves-shaped portions from the upper portions of the covers 15. Thus, the eaves-shaped portions of the electrodes 7 and the covers 15 are broken and removed by the jet water current. Stabilizing substance 10 is filled into the grooves 18 to bring the end surfaces of the junction 4 to passive states. Thus, the filling work of the substance 10 is simlified, and the whole circumferential surface portions of collector regions 1 are positively protected.</p> |
