发明名称 NITRIDE THERMOELECTRIC CONVERSION MATERIAL, MANUFACTURING METHOD THEREFOR AND THERMOELECTRIC CONVERSION ELEMENT
摘要 PROBLEM TO BE SOLVED: To provide: a nitride thermoelectric conversion material which does not use harmful elements, exhibits good performance, and can form a thin layer such as a film; a manufacturing method therefor; and a thermoelectric conversion element.SOLUTION: The nitride thermoelectric conversion material comprises a metal nitride represented by general formula WN(0.18≤y≤0.33), and has a β-WN type crystal structure and n-type thermoelectric properties. The method for manufacturing this nitride thermoelectric conversion material has a film forming step for forming a film by reactive sputtering in a nitrogen-containing atmosphere using a W sputtering target.SELECTED DRAWING: Figure 1
申请公布号 JP2016184600(A) 申请公布日期 2016.10.20
申请号 JP20150062706 申请日期 2015.03.25
申请人 MITSUBISHI MATERIALS CORP 发明人 FUJITA TOSHIAKI;NAGATOMO KENSHO
分类号 H01L35/22;C23C14/06;C23C14/34;H01L35/34 主分类号 H01L35/22
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