发明名称 |
NITRIDE THERMOELECTRIC CONVERSION MATERIAL, MANUFACTURING METHOD THEREFOR AND THERMOELECTRIC CONVERSION ELEMENT |
摘要 |
PROBLEM TO BE SOLVED: To provide: a nitride thermoelectric conversion material which does not use harmful elements, exhibits good performance, and can form a thin layer such as a film; a manufacturing method therefor; and a thermoelectric conversion element.SOLUTION: The nitride thermoelectric conversion material comprises a metal nitride represented by general formula WN(0.18≤y≤0.33), and has a β-WN type crystal structure and n-type thermoelectric properties. The method for manufacturing this nitride thermoelectric conversion material has a film forming step for forming a film by reactive sputtering in a nitrogen-containing atmosphere using a W sputtering target.SELECTED DRAWING: Figure 1 |
申请公布号 |
JP2016184600(A) |
申请公布日期 |
2016.10.20 |
申请号 |
JP20150062706 |
申请日期 |
2015.03.25 |
申请人 |
MITSUBISHI MATERIALS CORP |
发明人 |
FUJITA TOSHIAKI;NAGATOMO KENSHO |
分类号 |
H01L35/22;C23C14/06;C23C14/34;H01L35/34 |
主分类号 |
H01L35/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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