| 摘要 |
PROBLEM TO BE SOLVED: To provide an organic transistor that can be manufactured by a simple process and in which high crystallization of an organic semiconductor film can be performed.SOLUTION: An organic transistor includes a substrate 1 whose surface is formed of an insulator, a source electrode 2 and a drain electrode 3 which are formed on the substrate 1 to be away from each other, a lyophilic layer 4 having an opening portion containing a bottom surface which extends from a side surface of the source electrode 2 confronting the drain electrode 3 to the upper surface of the source electrode 2 and also extends from a side surface of the drain electrode 3 confronting the source electrode 2 to the upper surface of the drain electrode 3, the lyophilic layer 4 being formed on the surface of the substrate 1, the upper surface and side surface of the source electrode 2 and the upper surface and side surface of the drain electrode 3, a liquid-repellent layer 5 formed on the upper surface of the lyophilic layer 4, an organic semiconductor film 6 which is formed at the inner portion and upper portion of the opening portion so as to contact the side surface serving as an opening end of the opening portion in the lyophilic layer 4, a gate insulating film 7 formed on the organic semiconductor film 6, and a gate electrode 8 formed on the gate insulating film 7.SELECTED DRAWING: Figure 1 |
