Method for manufacturing germanium epitaxial layer and method for manufacturing device using the same

摘要

A method for manufacturing a germanium (Ge) epitaxial layer is provided. First, a substrate is provided. Then, a first deposition process is performed to deposit a first Ge epitaxial film on the substrate. Next, a first annealing process is performed on the first Ge epitaxial film. Following that, a second deposition process is performed to directly deposit a second Ge epitaxial film on the first Ge epitaxial film. Thereafter, a second annealing process is performed on the second Ge epitaxial film, wherein the Ge epitaxial layer includes the first Ge epitaxial film and the second Ge epitaxial film, and a thickness of the Ge epitaxial layer is greater than 0.5 microns.

主权项

1. A method for manufacturing a germanium epitaxial layer, comprising:
providing a substrate; performing a first deposition process to deposit a first germanium epitaxial film on the substrate; performing a first annealing process on the first germanium epitaxial film; performing a second deposition process to deposit a second germanium epitaxial film directly on the first germanium epitaxial film, wherein a temperature of the first deposition process and a temperature of the second deposition process are the same; and performing a second annealing process on the second germanium epitaxial film right after the second deposition process, and a duration of the first annealing process being greater than a duration of the second annealing process, wherein the germanium epitaxial layer comprises the first germanium epitaxial film and the second germanium epitaxial film, and a thickness of the germanium epitaxial layer is greater than 0.5 micrometers.