发明名称 PATTERN FORMING METHOD AND PATTERN FORMED MATERIAL
摘要 PROBLEM TO BE SOLVED: To reduce the influence of an additive and the thickness of an irradiated body so as to form a fine pattern by irradiating electron beams with the specific value of accelerating voltage to a member to be hardened, cross-linked or reformed, through a mask. SOLUTION: Electron beams with accelerating voltage of 10-150 kV are irradiated to a member to be hardened, cross-linked or reformed, through a mask with a specified pattern to form a pattern. A vacuum pipe type electron beam irradiation device is used as an electron beam generating device that can realize such low accelerating voltage. In this device, an electron beam generating part 2 in a vacuum container 1 made of cylindrical glass or ceramic takes out electrons emitted from a negative electrode as electron beams and accelerates them, and electron beams emitted from an irradiation aperture 5 are irradiated to irradiated material. The electron beams are therefore allowed to act upon coating material on a base material, with low depth so as to reduce an adverse effect on the base material and the generating quantity of secondary electron beams.
申请公布号 JPH1130700(A) 申请公布日期 1999.02.02
申请号 JP19970196380 申请日期 1997.07.08
申请人 TOYO INK MFG CO LTD 发明人 TAKAYAMA MICHIO;WATANABE KATSUMI
分类号 G21K5/04;C23F1/00;G03F1/20;G03F7/038;H01L21/027 主分类号 G21K5/04
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