发明名称 PATTERN FORMING MASK
摘要 PURPOSE:To prevent unsharpening and slipping of a pattern, and sticking, and to render density of a semiconductor device higher and its size smaller, by forming a pattern on the convex side of a glass plate, and bringing this side into close contact with a semiconductor substrate. CONSTITUTION:A mask pattern 3b is formed on the convex side of a glass substrate 3a to serve as a pattern forming mask 3. A photosensitive film 1a is attached to the principal face 1 of a semiconductor substrate 1, and this substrate is supported on a holder 2 by sucking the air in vacuo. The holder is raised so as to bring the film 1a on the substrate 1 into close contact with the pattern 3b. Since a bent glass substrate is used as a mask, and it comes into contact with the semiconductor substrate from the center gradually to the outside, each part in close contact does not vary in contact degree, and pattern slipping does not occur. The film 1a can be stripped from the peripheral part with ease after contact exposure without sticking.
申请公布号 JPS5727262(A) 申请公布日期 1982.02.13
申请号 JP19800102439 申请日期 1980.07.28
申请人 TOKYO SHIBAURA ELECTRIC CO 发明人 OOBA NORIHIKO
分类号 G03F1/60;H01L21/027 主分类号 G03F1/60
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