| 摘要 |
PURPOSE:To excellently monitor the light emitting state at the location adjacent to the light emitting region, by providing a current confining embeded layer between a semiconductor substrate and a heterogeneous junction structure. CONSTITUTION:On the N type GaAs substrate 11, is formed a P type reversely biased layer 12 (embeded layer) wherein the current confining part 12a is provided by removing the central part in a stripe shape. On said layer 12, is formed the heterogeneous junction structure 13 comprising a first clad layer 14 of N type GaAl As, a P type GaAs active layer 15, and a second clad layer 16 of P type GaAlAs. On the top of the second clad layer 16, is deposited an electrode 18 having a window 18a directly over the current confining part 12a via a P type ohmic contact layer 17. An electrode 19 is deposited on the entire bottom surface of the substrate 11. |
