| 摘要 |
PURPOSE:To reduce turning round of gas between crystal growth chambers and to perform crystal growth having radical change of composition by a method wherein substrates for trapping of gas are arranged respectively backward of crystal deposition regions in plural crystal growth chambers provided in a reaction tube. CONSTITUTION:The reaction tube 1 is divided into the two crystal growth chambers 3a, 3b upward and downward by a partition 2. A substrate 8 for crystal growth fixed at the tip of an operation bar 7 is made to be transferred between the growth chambers 3a, 3b by rotating motion of the operation bar 7. At this time, out of reaction gases having different compositions and flowing in the growth chambers 3a, 3b, to make the reaction gas not deposited on the substrate 8 to be deposited, the substrates 9a, 9b for trapping of gas are provided respectively backward of crystal growth regions of the respective crystal growth chambers. Accordingly turning round of gas between the respective crystal growth chambers is reduced, and the crystal layer having radical change of composition ratio and having favorable quality can be made to grow in succession. |
