| 摘要 |
PURPOSE:To form a resist pattern having no pin hole by a method wherein the resist film of chloromethlated polystylene is formed on a substrate, and after an electron beam is irradiated thereon and developing treatment is performed, it is dipped in a mixed liquid of a developer and a rinsing liquid having no developing ability. CONSTITUTION:The resist film of chloromethylated polystylene (CMS) is formed on the Si wafer, the prescribed positions thereof are irradiated with the electron beam and developing treatment is performed with acetone. Then after the wafer is dipped in the mixed liquid of the developer and the rinsing liquid, for example the mixed liquid of isopropyl alcohol (70%)-acetone (30%), rinsing is performed. Accordingly the CMF resist pattern having no pin hole can be obtained. |
