| 摘要 |
PURPOSE:To simultaneously measure the resolution and photosensitive characteristics of a photosensitive material by using a silicon-base inorg. resist having sensitivity to electron beams. CONSTITUTION:On a transparent substrate 11 a film of a silicon-base inorg. resist contg. a mixture of silicon with silicon oxide is formed. This resist film is irradiated with electron beams through plural sets of patterns 12 by means of an electron beam irradiator while varying the quantity of irradiation every set. Each set of patterns 12 are composed of patterns having different widths and lengths. Next, the substrate is chemically etched to convert the parts irradiated with electron beams into patterns. As a result, each set of paterns remain as films having various thicknesses according to the quantity of irradiation. |
