| 摘要 |
PROBLEM TO BE SOLVED: To provide an apparatus for processing a semiconductor substrate in a semiconductor substrate processing apparatus such as a chemical vapor deposition apparatus or a plasma-enhanced chemical vapor deposition apparatus, and a method of making the same.SOLUTION: A substrate pedestal module 320 includes a platen 205 made of ceramic material having an upper surface 206 configured to support a semiconductor substrate thereon during processing, a stem 210 made of ceramic material having an upper stem flange 215 that supports the platen, and a backside gas tube 250 made of ceramic material that is located in an interior 213 of the stem. The backside gas tube includes an upper gas tube flange 253 that is located between a lower surface 208 of the platen and an upper surface of the upper stem flange. The backside gas tube is in fluid communication with at least one backside gas passage 207 of the platen, and is configured to supply a backside gas to a region below a lower surface of a semiconductor substrate that is to be supported on the upper surface of the platen during processing.SELECTED DRAWING: Figure 2 |
