| 摘要 |
PURPOSE:To obtain a minute electrode or wiring with high accuracy by using an isotropic etching method for the etching of a film section on an overhang section or a stage differnce section and a reactive ion etching method, which approximately functions in the vertical direction to a substrate, for the etching of a film section where there are no said sections. CONSTITUTION:The first layer gate electrode 5, a layer insulating film 6 and a gate oxide film 8 for a peripheral circuit are formed onto an element region of the P type Si substrate 1 partitioned by field insulating films 2, and a polycrystal Si film 9 into which N type impurities are doped is deposited on the whole surface containing these. Resist films 221, 222 are shaped to the second layer gate electrode prearranged section of the element region and its peripheral circuit section, and the second layer gate electrode 10 consisting of the polycrystal Si film 9 is formed through the etching of an isotropic CF4 plasma gas without leaving the electrode 10 at the overhang section 7. The films 221, 222 are remolded to films 231, 232, the new films are etched by reactive ions, and a gate electrode 10' completely conforming to the film 232 is obtained. |
