| 摘要 |
PURPOSE:To easily obtain a shift of surface azimuth with high accuracy, by forming an insulation film with an opening of specified pattern on the surface of a semiconductor substrate and establishing a grown layer made of crystal selectively through the use of raw material solution in <=0.3 deg.C oversaturation degree and taking the surface as reference. CONSTITUTION:On a mirror-finished chemical semiconductor substrate 1, for example, SiO2 films 2, 2' are formed to a specified pattern with the CVD method. The width is regulated to 1-100mum and the width of openings 3, 3' is regulated to 20mum-1mm.. A parallel intrinsic crystal plane 6 with minute small planes 4-4'' is formed on a substrate 1 with the liquid phase epitaxial growth method by using raw material solution in <=3 deg.C oversaturation degree. Grown layers 5, 5' on the openings 3, 3' are cleft almost orthogonally to the lengthwise direction. The shift of surface azimuth can be obtained easily with high accuracy by measuring heights d1, d2 of both ends and width (w) of the grown layers at a cleavage plane. |
