| 摘要 |
PURPOSE:To obtain a film having stable quality with a short annealing time by a method wherein the annealing is performed in hydrogen plasma after the amorphous semiconductor film formed by glow discharge has been heat-treated in the specified temperature range. CONSTITUTION:The amorphous semiconductor film formed by glow discharge method is heated at the temperature range of 400-500 deg.C. As a result, Si-H2 and (Si-H2)n are decomposed and Si is generated, but Si<-> is obtained by rearrangement of elemental Si. However, as the evaporation of hydrogen is active in the vicinity of the surface of the amorphous film, a large quantity of the Si<-> ions exists there, but the quantity in the film is small. Subsequently, when the amorphous film is annealed in hydrogen plasma, the dangling bonds (Si<->) are eliminated. In this case, as a considerable quantity of Si-H pairs is contained in the amorphous film and also a number of dangling bonds exist in the vicinity of the film surface, the annealing time can be reduced even when the amorphous film is thick. |
