| 摘要 |
PURPOSE:To obtain the transducing element which can be driven by a low voltage, by providing a cantilever shaped element block comprising a piezoelectric film layer having electrode layers on both surfaces in a hole formed through an opening in an insulating layer which is deposited on the surface of a semiconductor substrate. CONSTITUTION:An insulating film 21 is deposited on the surface of the semiconductor substrate 20 of Si and the like. On the area wherein the opening 22 is to be provided by etching treatment later, electrodes 23 whose area is smaller than that of the expected opening 22 and a piezoelectric thin film layer 24 comprising BaTiO3 are formed by sputtering, photolithography, etching and the like. Thus, the element block 25, wherein the electrode layers 23 are provided on both surfaces of the layer 24, is obtained. Then the opening 22 is formed in the layer 21 and a hole 26 is provided in the substrate 20 through the opening 22. The block 25 is supported on the substrate 20 as a cantilever state. If the layer 24 is made of titanic acid, zirconic acid, and lead, polarization treatment is performed. If it is made of ZnO, this treatment is not required. Thus the thin block 25 which is suitable for the low voltage driving is obtained. |
