| 摘要 |
PURPOSE:To form a semiconductor having a crystalline region and noncrystalline region mixed together by a method wherein a high frequency energy is applied to silicide gas molecule polymerized during its flight to cause the reaction with it. CONSTITUTION:Silicide gas such as silane or the like is introduced to a reactive tube, a plasma glow discharge is provided to activate the silicide gas and polymerize it. Induction energy is applied to the cluster of the polymerized gas, and ionized helium and others are caused to make a collision with each other to cause the crystallization reaction in the outer periphery. The clusters are mounted on a substrate to obtain a semiconductor. The cluster 30 on the substrate serves to convert the outer periphery 27 into a semiconductor having crystallization and the central portion 28 into an amorphous semiconductor. Further, the central portion 28 contains relatively the unpaired bonding arm neutralized element of high density as compared with the outer periphery 27. A crystallizable semiconductor is contained by 30-90wt% and the unpaired bonding arm neutralized element is contained by 8mol%. |
