High power RF integrated circuit assembly - contains number of transistor circuit chips on common substrate with common conductor areas, forming push=pull configuration

摘要

The assembly uses an alumina substrate that covers a ceramic support to leave holes for collector terminations to which transistor chips are fixed. These chips comprise several individual transistors with the body forming a common collector. mos capacitors are deposited on the upper surface of the substrate close to the holes. Several conductors connect the transistor emitters to the metallisation forming one terminal of the appropriate capacitor. Other conductors connect the transistor base circuits to other capacitors and to metallised input areas. The metallised areas for the collectors, inputs and grounding areas are located on the ceramic support. Connections of emitters to a common metallised area permits operation in a common emitter configuration.