发明名称 Negative photosensitive resin composition, cured resin film, partition walls and optical element
摘要 To provide a negative photosensitive resin composition which is capable of imparting good ink repellency to a cured film, particularly to the upper surface of partition walls, and which has characteristics such that an ink repellent agent is less likely to remain in opening sections defined by the partition walls even without UV/O3 irradiation treatment, and the ink is permitted to uniformly wet-spread without unevenness. A negative photosensitive resin composition characterized by comprising (A) an alkali-soluble resin or alkali-soluble monomer, which has a photo-curability, (B) a photopolymerization initiator, (C) an ink repellent agent having fluorine atoms, and (D) a compound which is a partially hydrolyzed condensate of a hydrolysable silane compound mixture containing a hydrolysable silane compound having a mercapto group and a hydrolysable group and/or a hydrolysable silane compound having a group with an ethylenic double bond and a hydrolysable group, and which has no fluorine atom.
申请公布号 US9459529(B2) 申请公布日期 2016.10.04
申请号 US201514688366 申请日期 2015.04.16
申请人 Asahi Glass Company, Limited 发明人 Matsuura Keigo;Takahashi Hideyuki;Kawashima Masayuki;Kobayashi Daisuke
分类号 G03F7/038;G03F7/075;G03F7/028;G03F7/027;G03F7/004;B32B27/16;B32B27/24;B32B27/26;B32B27/20;C08F290/06;G02F1/1335 主分类号 G03F7/038
代理机构 Oblon, McClelland, Maier & Neustadt, L.L.P. 代理人 Oblon, McClelland, Maier & Neustadt, L.L.P.
主权项 1. A cured resin film formed on a substrate and characterized in that in a composition analysis by an X-ray photoelectron spectroscopy (XPS), the ratio of the concentration of fluorine atoms to the concentration of carbon atoms at the surface of the cured resin film i.e. [F/C] is at least 0.1, in a mass analysis in the thickness direction of the cured resin film by a time-of-flight secondary ion mass spectrometry (TOF-SIMS) using Ar cluster as sputtering ions, the intensity profile of Si2O5H− has the maximum value in intensity in the interfacial region to the substrate as defined in the following (2) in the thickness range excluding the surface region of the cured resin film as defined in the following (1), and the ratio of the above maximum value in intensity to the minimum value in intensity in the thickness range excluding the above surface region and the above interfacial region i.e. [maximum value of Si2O5H−/minimum value of Si2O5H−] is more than 1 and at most 10, and in the above mass analysis, the ratio of the average value in intensity of Si2O5H− to the average value in intensity of C− in the thickness range excluding the surface region of the above cured resin film and the interfacial region to the above substrate i.e. [average value of Si2O5H−/average value of C−] is at least 0.001: (1) the surface region of the above cured resin film is a region beginning at the surface of the above cured resin film and extending to a 100 nm position towards the substrate side from said surface, (2) the interfacial region of the above cured resin film to the above substrate is a region beginning at the position from the above cured resin film surface, of the rising start point of intensity of secondary ions of the main component or a specific component of the above substrate and extending to the position from the above cured resin film surface, of the rising terminal point of intensity of secondary ions of the main component or a specific component of the above substrate, in the mass analysis in the thickness direction in TOF-SIMS.
地址 Tokyo JP