| 摘要 |
PURPOSE:To reduce the ocurrence of defective products, by forming contact patterns thicker than normal patterns on suitable places of a photo mask to be contacted with a photo resist, when superposing a photo mask on a photo resist to expose. CONSTITUTION:Contact patterns 8c slightly thicker than the mask patterns 8 are formed in addition thereto on the photo mask 9. When loading the photo mask on a wafer 1, normal mask patterns 8 and thicker contact patterns 8c likewise are loaded on the photo resist 7 as the substrate. The contact pattern 8c is preferably 0.2-0.5mum thicker than the normal mask pattern 8. Thus, the photo resist 7 exposed by the central mask pattern is not contacted with the photo mask 9 being not subject to pressure, thereby there is no possibility of resist crushes. |
