发明名称 |
A semiconductor device comprising a bulk-defect region and a process for producing such a semiconductor device. |
摘要 |
A semiconductor device, for example a CMOS, includes a semiconductor substrate 1 having a denuded region 2 and a bulk-defect region 3 and semiconductor elements 4 and 5. Element 4 may include a P well 15 while element 5 may include P<+> - type source or drain region (9, 10). To minimise or eliminate leak current at the PN junction 12 the distance from the surface of the substrate 1 to the surface of the bulk-defect region 3 varies in response to the nonuniform depth of the semiconductor elements 4 and 5. The device may be made by selectivly forming forming the bulk-defect region 3 with a high oxygen concentration and a nonuniform depth that varies in response to the nonuniform depth of the elements and forming the elements above the bulk-defect region. |
申请公布号 |
EP0070713(A2) |
申请公布日期 |
1983.01.26 |
申请号 |
EP19820303755 |
申请日期 |
1982.07.16 |
申请人 |
FUJITSU LIMITED |
发明人 |
HIRAGUCHI, TAKAO;IMAOKA, KAZUNORI |
分类号 |
H01L29/73;H01L21/322;H01L21/331;H01L21/82;H01L21/8238;H01L23/556;H01L27/06;H01L27/092;H01L29/167;(IPC1-7):01L29/32;01L29/167;01L21/322 |
主分类号 |
H01L29/73 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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