| 摘要 |
PURPOSE:To enable the supply of high frequency power source by connecting a diode showing a short backward recovery time between the auxiliary gate electrode and gate electrode. CONSTITUTION:An auxiliary gate turn-off thyristor consisting of an auxiliary thyristor portion (a) and a main thyristor portion (b) comprises the pE layer 1, nB layer 2, pB layer 3, nE layer 4, nE layer 5 of the auxiliary thyristor, J1 junction 6, J2 junction 7, J3 junction 8, J3 junction 9 of the auxiliary thyristor, cathode 10, gate electrode 11, auxiliary gate electrode 12 and the cathode 13 of the auxiliary thyristor part. A by-pass diode 14 is provided for equally turning off the periphery of the cathode emitter nE only with a gate current. When the backward recovery time of diode 14 is curtailed, branching of the gate current at the time of turn-on is prevented and accordingly element temperature rise is also prevented. |
