| 发明名称 |
X-RAY LITHOGRAPHY AT 100 D LINEWIDTHS USING X-RAY MASKS FABRICATED BY SHADOWING TECHNIQUES |
| 摘要 |
<p>X-RAY LITHOGRAPHY AT ~ 100 .ANG. LINEWIDTHS USING X-RAY MASKS FABRICATED BY SHADOWING TECHNIQUES A method for producing X-ray masks with precisely controlled linewidths. The method comprises forming a relief structure with a predetermined cross-section. An X-ray absorber material is deposited at an oblique angle onto the relief structure.</p> |
| 申请公布号 |
CA1143483(A) |
申请公布日期 |
1983.03.22 |
| 申请号 |
CA19800352940 |
申请日期 |
1980.05.27 |
| 申请人 |
MASSACHUSETTS INSTITUTE OF TECHNOLOGY |
发明人 |
FLANDERS, DALE C. |
| 分类号 |
H01L21/027;G03F1/22;(IPC1-7):B41M1/06;G03B41/16;B41M5/00 |
主分类号 |
H01L21/027 |
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