| 摘要 |
<p>PURPOSE:To simply supply a semiconductor memory by arraying aluminum wirings to gate and source region in a mask ROM, then covering a thin PSG film on the drain region, and wiring the drain region in response to the user's program. CONSTITUTION:An MOS element to become the body of an ROM is formed on an Si substrate 1. The MOS element is formed of a source region 3, a drain region 4 and a gate electrode 6. After the MOS element is formed, a PSG film 32 is covered on the region except the element region. Then, aluminum wirings are formed on the source region 3 and the gate electrode 6. Thereafter, the surface is protected with a thin PSG film 32, and user's order is waited. When the order is dispatched, the film 32 is opened in response to the user's program, and aluminum 34 is wired on the region 4. In this manner, since the film 32 is formed thinly, the opening work on the regin 4 can be simply performed and a semiconductor memory can be rapidly supplied to the user.</p> |
