| 摘要 |
PURPOSE:To enhance the insulating withstand voltage of a semiconductor device with self-aligning type by forming a Schottky barrier type gate, then forming a protective film and a mask on the overall surface, forming electrodes with the mask, remaining the protective film, and heat treating them. CONSTITUTION:A high melting point metallic layer 6 such as TiW alloy is formed on the uppermost layer 1 made of GaAs or AlGaAs, is patterned to form a Schottky barrier type gate 5, a thin AlN layer protective film formed on the overall surface of a substrate, N type impurity is injected with a mask, and is heat treated, thereby forming a source and a drain. Since the thickness of the film 6 and the isolating distance of the gate and the source, drain 8, 9 substantially coincide, the thickness of the protective film can be decided in response to the using voltage of the maximum surge voltage to be expected. The protective film also has both effects of preventing surface modification due to the ion implantation and surface modification due to the heat treatment. |
