发明名称 |
PROCEDE DE FABRICATION D'UNE DIODE SCHOTTKY SUR UN SUBSTRAT EN DIAMANT |
摘要 |
A method for producing a Schottky diode, including the following steps: oxygenating the surface of a semiconductive layer of monocrystalline diamond, in such a way as to replace hydrogen surface terminations of the semiconductive layer with oxygen surface terminations; and forming, by physical vapour deposition, a first conductive layer of zirconium or indium-tin oxide on the surface of the semiconductive layer. |
申请公布号 |
FR3004853(B1) |
申请公布日期 |
2016.10.21 |
申请号 |
FR20130053647 |
申请日期 |
2013.04.22 |
申请人 |
CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE;UNIVERSITE JOSEPH FOURIER;INSTITUT POLYTECHNIQUE DE GRENOBLE |
发明人 |
EON DAVID;GHEERAERT ETIENNE;MURET PIERRE;PERNOT JULIEN;TRAORE ABOULAYE |
分类号 |
H01L21/285;H01L29/872;H01L31/108 |
主分类号 |
H01L21/285 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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