发明名称 PROCEDE DE FABRICATION D'UNE DIODE SCHOTTKY SUR UN SUBSTRAT EN DIAMANT
摘要 A method for producing a Schottky diode, including the following steps: oxygenating the surface of a semiconductive layer of monocrystalline diamond, in such a way as to replace hydrogen surface terminations of the semiconductive layer with oxygen surface terminations; and forming, by physical vapour deposition, a first conductive layer of zirconium or indium-tin oxide on the surface of the semiconductive layer.
申请公布号 FR3004853(B1) 申请公布日期 2016.10.21
申请号 FR20130053647 申请日期 2013.04.22
申请人 CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE;UNIVERSITE JOSEPH FOURIER;INSTITUT POLYTECHNIQUE DE GRENOBLE 发明人 EON DAVID;GHEERAERT ETIENNE;MURET PIERRE;PERNOT JULIEN;TRAORE ABOULAYE
分类号 H01L21/285;H01L29/872;H01L31/108 主分类号 H01L21/285
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