| 摘要 |
PURPOSE:To permit taper etching of an insulating film with good controllability and to improve both machinability and reliability of the wiring formed subseqnently by a method wherein regist etching control gas containing hydrogen which offers no influence on an etching speed of the insulating film is added to control only the etching speed of the resist, thereby to allow the opening portion to have the desired inclination. CONSTITUTION:A window pattern for the opening portions is formed on a silicon substrate 11 using the normal process. Then, a silicon oxide film 16 is etched in an anisotropic manner. At this time, by using CF4 gas added with H2 gas as etching gas, the opening portions of the silicon oxide film 16 are formed each to have an inclination of about 75 deg. as shown in Fig. Subsequently, an Al-Si film 19 formed of wiring materials is evaporated through sputtering as shown in Fig., and then wiring is formed using the normal process. At this time, the Al Si film 19 is formed in the opening portions uniformly without including any overhang, thereby causing no disconnection. |
