| 摘要 |
PURPOSE:To readily manufacture a semiconductor device in less steps by forming electrode wirings of metal silicide and heat treating an interlayer insulating film with the oxidized film as the interlayer insulating layer. CONSTITUTION:A phosphorus-doped molybdenum silicide film is formed on a dioxidized silicon insulating film 12 on a silicon semiconductor substrate 11. The silicide film is patterned, thereby forming electrode wirings 13. Then, it is thermally oxidized in wet oxidative atmosphere at 700 deg.C, thereby forming an oxidized film 14 for covering the wirings 13. When the film 14 is thermally oxidized at higher than 1,050 deg.C, a so-called glass flow is performed, thereby eliminating an abrupt step at the film 14 and forming a smooth step. |
