| 摘要 |
PURPOSE:To form a highly uniform semiconductor film allowing carriers to readily move on an insulating substrate by a method wherein a small piece of a thin film is formed at such temperatures that crystallization will not occur on the surface of an amorphous semiconductor film and a crystalline nucleus is produced by annealing so as to uniformly crystallize the amorphous semiconductor film by causing the film to grow in a solid phase. CONSTITUTION:An amorphous Si film 2 is formed on top of a Si monocrystalline substrate 1 where a thermo-oxidized film has been formed and small pieces of SiO2 films 3 are formed on top of the amorphous Si film in the form of a grit. If these small pieces are annealed at relatively low temperatures, a crystalline cleus 4 is produced on the periphery of each small piece of the SiO2 film. Crystalline particles grow with the crystalline nucleus 4 as the center according to the growth in a solid phase, so that a polycrystalline Si film 5 having uniform particles in diameter is obtainable over the whole surface of the wafer. Thus, highly uniform semiconductor films offering excellent element characteristics can be manufactured. Moreover, since annealing is conducted at temperatures that are unable to fuse the semiconductor film, this manufacturing method is useful when the elements have already been formed on the substrate integratedly or when three-dimensional IC's are formed. |
