| 摘要 |
PURPOSE:To prevent crystal dissociation of GaAs to be generated when the temperature is held at a high temperature at performance of ion implantation by a method wherein AlN films are formed on both of the surface and the back of a GaAs substrate, and ions are implanted through the AlN film thereof. CONSTITUTION:The AlN films 2, 3 are adhered respectively on the surface and on the back of the semiinsulating GaAs substrate 1. Then the substrate thereof is mounted on a holder 5 provided with a built-in heater 4 and is enabled to rise the temperature by heating, and the substrate 1 is held at the crystal dissociation temperature or more. Then ions are implanted in the GaAs substrate 1 through the AlN film 2. Finally, the heat treatment is performed for activation of impurities. Accordingly, crystal dissociation of GaAs to be generated when ions are to be implanted can be prevented, and accordingly, crystal defects to be generated in the GaAs crystal can be reduced. |
