| 摘要 |
PURPOSE:To carry on normal operation even if some memory cell has a defecitive insulating film in a memory circuit wherein one-bit information is stored in two memory cells, by freely varying a power line voltage. CONSTITUTION:In the process of manufacturing a memory circuit, a function test is taken. If one of two memoty cells MC1 and MC1' wherein one-bit information is stored has a defective insulating film and an error such as transition from a low to a high potential is found, applying a high voltage to a bonding P2 selects a circuit block VRG2 through a terminal I2. Consequently, when both cells MC1 and MC1' are normal and a block VRG1 is selected, a power voltage VR varies and if the error such as the transition from the low potential to the high potential occurs, normal reading is performed, improving the yield of the memory circuit. |
