| 摘要 |
PURPOSE:To ensure the capacitance value of a capacitor while removing capacitance between wiring, to use the polycrystal silicon of two layers employed for forming the capacitor for wiring respectively and to improve the degree of integration by separately shaping the insulating film of the capacitor and an insulating film between wiring. CONSTITUTION:A field oxide film 302 is formed to a P type silicon substrate 301, and a gate oxide film 303, a gate electrode 304, a capacitor lower electrode 305 and wiring 306 are shaped. An N type impurity is diffused to the whole surface, source-drain regions 307 and the layer insulating film 308 are molded, and a window is bored to a capacitor section. The capacitor lower electrode 305 and a thermal oxide film 309 are formed, and windows for contact with the source-drain regions are bored. The second polycrystal silicon is shaped, a contact 10 with the source and drain, a capacitor upper electrode 311 and the second wiring 312 are wiring-formed, and the layer insulating film 313 is further shaped, and wiring is formed by a metal for wiring such as Al. |
