| 摘要 |
PURPOSE:To prevent the decrease of SN ratio due to the leak current, by forming the piezoresistive element of semiconductor single crystal, on a semiconductor single crystal substrate which constitutes a strain generation part, via a semiconductor compound. CONSTITUTION:On the surface of the substrate 1 constituted of single crystal Si, an insulation layer 2 constituted of Si dioxide is provided, and thereon the piezoresistive element 3 is formed, thereby the insulation can be kept perfectly, and accordingly the leak current at a high temperature becomes extremely small. The phenomenon that the voltage is not proportional to the resistance by the depletion effect of a PN junction can be restrained, owing to the interposition of the insulation layer 2 between the piezoresistive element 3 and the substrate 1. Since the insulation layer 2 is constituted of thermal oxide of Si which constitutes the substrate 1 and the piezoresistive element 3, the matching at each interface is good, and accordingly the generation of strain due to the difference of coefficients of thermal expansion can be avoided. |
