| 摘要 |
<p>1. A semiconductor device with a low parasitic capacitance, the external connections of which are made of metal stripes (3, 4) attached flatly to the upper surface of a semiconductor dice (1, 2), this dice comprising at least one superficial active layer (2) supported by a substrate (1) and constituting a junction, characterized in that the mechanical support of this device is a frame (8) made of an electrically insulating and rigid material and surrounding completely the semiconductor dice, these stripes (3, 4) of the external connections bearing on said frame, and that the thickness of the substrate (1), particularly underneath the superficial layer (2) forming the junction, is small with respect to that of the rigid frame and is about three times as large the skin effect of said device at the operating frequency of the device.</p> |
