| 摘要 |
<p>STATIC INDUCTION TRANSISTORS WITH IMPROVED GATE STRUCTURES Vertical geometry static induction transistors have gate structures which improve high frequency performance and which simplify device fabrication. Ohmic source and drain contacts are formed on opposite sides of a layer of high resistivity semiconductor material of one conductivity type. Grooves, typically V-shaped, are formed in the surface of the high resistivity layer on opposite sides of the source. According to one embodiment, the gate junctions are formed by diffusing semiconductor material of the opposite conductivity type into the surfaces of the V-shaped grooves. According to another embodiment, the gate junctions are Schottky contacts formed by applying a metallization directly to the surfaces of the V-shaped grooves.</p> |
