| 摘要 |
PURPOSE:To prevent movement of lower layer wiring even during the glass flow of the upper insulating layer by making the softening point temperature of the second insulating film lower than that of the first insulating film. CONSTITUTION:An uneven insulating film 2 such as SiO2 is formed on the surface of substrate 1 such as a semiconductor, the second insulating film 3 such as zinc glass film is formed in view of obtained flat insulating film 2, and the surface is made flat by the annealing for glass flow of about 700 deg.C. Thereafter, the first electrode wiring 4 consisting of Al is formed, the second insulating film 5 consisting of lead glass is formed thereon and the surface is made flat by the annealing for glass flow of about 450 deg.C. At this time, the first insulating film 3 used as the base material is not softened because it has a high softening point temperature as high as 700 deg.C. Then, the second electrode wiring 6 consisting of Al is formed. |
